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  this is information on a product in full production. march 2014 docid14807 rev 2 1/13 13 stGW40NC60KD 600 v, 40 a short-circuit rugged igbt datasheet - production data figure 1. internal schematic diagram features ? low on-voltage drop (v ce(sat) ) ? low c res / c ies ratio (no cross conduction susceptibility) ? short-circuit withstand time 10 s ? igbt co-packaged with ultra fast free-wheeling diode applications ? high frequency inverters ? motor drivers description this igbt utilizes the advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. to-247 1 2 3 table 1. device summary order code marking package packaging stGW40NC60KD GW40NC60KD to-247 tube www.st.com
contents stGW40NC60KD 2/13 docid14807 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid14807 rev 2 3/13 stGW40NC60KD electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at t c = 25 c 70 a i c (1) collector current (continuous) at t c = 100 c 38 a i cl (2) 2. v clamp = 80%,(v ces ), t j =150c, r g = 10 , v ge = 15 v turn-off latching current 220 a i cp (3) 3. pulse width limited by max. junction temperature allowed pulsed collector current 220 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 30 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 120 a p tot total dissipation at t c = 25 c 250 w t scw short circuit withstand time, v ce = 0.5 v (br)ces t j = 125c, r g = 10 , v ge = 12 v 10 s t j operating junction temperature ? 55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case igbt max. 0.5 c/w thermal resistance junction-case diode max. 1.5 c/w r thj-amb thermal resistance junction-ambient max 50 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t c i , c () ? --------------------------------------------------------------------------------- - =
electrical characteristics stGW40NC60KD 4/13 docid14807 rev 2 2 electrical characteristics t case =25c unless otherwise specified. table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t c = 125 c 2.1 1.9 2.7 v v i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t c = 125 c 500 5 a ma v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 4.5 6.5 v i ges gate-emitter cut-off current (v ce = 0) v ge = 20 v 100 na g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ce = 15 v , i c = 30 a 20 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 2870 295 69 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v, i c = 30 a, v ge = 15 v (see figure 18) - 135 27 69.5 - nc nc nc
docid14807 rev 2 5/13 stGW40NC60KD electrical characteristics table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 480 v, i c = 30 a r g =10 , v ge = 15 v, (see figure 17) - 46 18.5 1530 - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 480 v, i c = 30 a r g =10 , v ge = 15 v, t c = 125 c (see figure 17) - 45 19 1400 - ns ns a/s t r(voff) t d(off) t f off voltage rise time turn-off delay time current fall time v cc = 480 v, i c = 30 a r g =10 , v ge = 15 v, (see figure 17) - 38 164 87 - ns ns ns t r(voff) t d(off) t f off voltage rise time turn-off delay time current fall time v cc = 480 v, i c = 30 a, r g = 10 , v ge = 15 v t c = 125 c (see figure 17) - 70 208 130 - ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on e off (1) e ts 1. turn-off losses include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v cc = 480 v, i c = 30 a r g =10 , v ge = 15 v, (see figure 17) - 595 716 1311 - j j j e on e off (1) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 480 v, i c = 30 a r g =10 , v ge = 15 v, t c = 125 c (see figure 17) - 808 1200 2008 - j j j table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 30 a i f = 30 a, t c = 125 c - 2.4 1.8 - v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a,v r = 50 v, di/dt = 100 a/ s (see figure 20) - 45 56 2.55 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a,v r = 50 v, t c =125 c, di/dt = 100 a/ s (see figure 20) - 100 290 5.8 - ns nc a
electrical characteristics stGW40NC60KD 6/13 docid14807 rev 2 2.1 electrical characteristics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs. temperature figure 6. gate charge vs. gate-source voltage figure 7. capacitance variations 5 7 9 11 13 15 gfs(s) hv43540 4 6 8 10 12 14 16 18 i c (a) t j =-50c t j =150c t j =25c 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 v ce(sat) -50 0 50 100 t j (c) (v) hv43550 i c =40a i c =30a i c =10a
docid14807 rev 2 7/13 stGW40NC60KD electrical characteristics figure 8. normalized gate threshold voltage vs. temperature figure 9. collector-emitter on voltage vs. collector current figure 10. normalized breakdown voltage vs. temperature figure 11. switching losses vs. temperature figure 12. switching losses vs. gate resistance figure 13. switching losses vs. collector current
electrical characteristics stGW40NC60KD 8/13 docid14807 rev 2 figure 14. thermal impedance figure 15. turn-off soa figure 16. forward voltage drop vs. forward current 0 10 20 30 40 50 60 70 80 90 100 110 120 0123456 vfm(v) tj=25?c (maximum values) tj=125?c (maximum values) tj=125?c (maximum values) tj=125?c (typical values) tj=125?c (typical values) ifm(a)
docid14807 rev 2 9/13 stGW40NC60KD test circuits 3 test circuits figure 17. test circuit for inductive load switching figure 18. gate charge test circuit figure 19. switching waveform figure 20. diode recovery time waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data stGW40NC60KD 10/13 docid14807 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 21. to-247 drawing 0075325_g
docid14807 rev 2 11/13 stGW40NC60KD package mechanical data table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
revision history stGW40NC60KD 12/13 docid14807 rev 2 5 revision history table 10. document revision history date revision changes 11-jun-2008 1 initial release 12-mar-2014 2 modified total switching losses typical value in table 7: switching energy (inductive load) . minor text changes.
docid14807 rev 2 13/13 stGW40NC60KD please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com


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